Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6944074 | Microelectronic Engineering | 2013 | 7 Pages |
Abstract
- Ge gate stacks by exposing oxygen plasma to ALD Al2O3/Ge were proposed.
- GeOx formed between Al2O3 and Ge significantly reduces interface state density.
- High electron mobility of 690Â cm2/Vs in Ge nMOSFETs with EOT of 0.7-0.8Â nm.
- High hole mobility of 546Â cm2/Vs in Ge p-MOSFETs with EOT of 0.7-0.8Â nm.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Shinichi Takagi, Rui Zhang, Mitsuru Takenaka,