Article ID Journal Published Year Pages File Type
6944074 Microelectronic Engineering 2013 7 Pages PDF
Abstract

- Ge gate stacks by exposing oxygen plasma to ALD Al2O3/Ge were proposed.
- GeOx formed between Al2O3 and Ge significantly reduces interface state density.
- High electron mobility of 690 cm2/Vs in Ge nMOSFETs with EOT of 0.7-0.8 nm.
- High hole mobility of 546 cm2/Vs in Ge p-MOSFETs with EOT of 0.7-0.8 nm.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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