| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944082 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- HfO2/Si3N4 bandgap-engineered trapping layer is applied to nanowire flash device for the first time.
- P/E speeds can be significantly improved by bandgap-engineered trapping layer.
- The improvement is more obvious on nanowire channel flash device.
- Good retention and endurance characteristics are also demonstrated.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Chun-Yuan Chen, Kuei-Shu Chang-Liao, Hao-Wei Ho, Tien-Ko Wang,