| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944089 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- We analyzed the charge pumping signals in ultra-scaled 3D vertical devices.
- Statistical analysis has been used to characteristic the variability of poly-Si channel.
- The quality of bottom and top junctions with different process has been presented.
- Different poly-Si formations and hole sizes have been investigated.
- Different annealing conditions have been carried out for optimization of the channel of 3D flash memory.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Baojun Tang, M. Toledano-Luque, W.D. Zhang, G. Van den bosch, R. Degraeve, J.F. Zhang, J. Van Houdt,