| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944097 | Microelectronic Engineering | 2013 | 5 Pages |
Abstract
⺠We have presented experimental results on the capacitance of a-Si:H/a-SiC:H pinpin photodiode. ⺠The behaviour of the device has been explained recurring to a numerical simulation. ⺠Trapped charge in the bottom diode intrinsic layer controls the photo-capacitance.
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Authors
A. Fantoni, M. Fernandes, P. Louro, M.A. Vieira, M. Vieira,