Article ID Journal Published Year Pages File Type
6944104 Microelectronic Engineering 2013 4 Pages PDF
Abstract
► We thermochemically asses the dominant vapors present during CuO nanowire growth. ► A significant CuOH partial pressure exists at the Cu-Cu2O interface and is likely to be the transport precursor. ► This assessment is likely to be valid for other metal-oxide systems that also produce volatile hydroxides.
Keywords
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Volatile CuOH as a precursor for the growth of CuO nanowires
Authors
, ,