| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944112 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- We study resistive switching memories with Hf or Ti metal oxygen exchange layers.
- STEM dark field and EELS are used to observe the conductive filament.
- The filament is a cone-shaped metal-rich region in the HfO2 dielectric layer.
- Composition of the metallic filament is dominated by Hf or Ti depending on the OEL.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Privitera, G. Bersuker, B. Butcher, A. Kalantarian, S. Lombardo, C. Bongiorno, R. Geer, D.C. Gilmer, P.D. Kirsch,