| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944132 | Microelectronic Engineering | 2013 | 5 Pages |
Abstract
- Percolation model used to optimize oxide and cap thickness for forming-free RRAM.
- “Hot forming” helps reduce variability in the forming voltage statistics.
- Quantum point contact formulation has been used to explain “hot forming”.
- Forming is two-stage process involving filament nucleation (SBD) and growth (PBD).
- Convolution of filament nucleation and growth gives non-Weibullian statistics.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
N. Raghavan, A. Fantini, R. Degraeve, P.J. Roussel, L. Goux, B. Govoreanu, D.J. Wouters, G. Groeseneken, M. Jurczak,