Article ID Journal Published Year Pages File Type
6944133 Microelectronic Engineering 2013 4 Pages PDF
Abstract

- We demonstrated forming-free switching using atomic layer deposited HfTiOx nanolaminate.
- Effect of Hf:Ti ratio and anneal conditions on switching characteristics were studied.
- Multi-level operation with four distinct levels and stable retention were observed.
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Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate
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