| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944136 | Microelectronic Engineering | 2013 | 12 Pages |
Abstract
- HfxAl1âxOy films with graded Al depth profile were grown by atomic layer deposition.
- The graded HfxAl1âxOy based stacks exhibit multilevel resistive switching behavior.
- Resistive switching is described in terms of redistribution of the oxygen vacancies.
Keywords
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Authors
A. Markeev, A. Chouprik, K. Egorov, Yu. Lebedinskii, A. Zenkevich, O. Orlov,