| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944138 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- We achieved selector-less RRAM characteristics.
- Transition from linear conduction to non-linear conduction was observed by controlling the compliance current.
- Non-linearity of device was observed under high operating currents.
- The suboxide region, which was formed thermally, might affect to exhibit non-linearity.
- The obtained non-linearity can suppress the leakage current in the cross-point array applications.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jiyong Woo, Daeseok Lee, Godeuni Choi, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, Hyunsang Hwang,