| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944143 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Mobility in highly doped junctionless trigate MOSFETs is experimentally studied.
- Mobility enhancement in narrow nanowire versus wide devices is demonstrated.
- Mobility values in narrow nanowire MOSFETs exceed the bulk mobility value.
- These effects are due to reduced impurity scattering in narrow nanowire devices.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
T. Rudenko, A. Nazarov, R. Yu, S. Barraud, K. Cherkaoui, P. Razavi, G. Fagas,