| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944144 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Advanced FinFETs are fabricated on the ONO buried insulator.
- The nitride buried insulator can trap charges for the flash memory operation.
- The same device was investigated for the 1T-DRAM operation.
- By combining nonvolatile and volatile, multi-bit 1T-DRAM operation was obtained.
- Analog/logic and memory operation can be performed at the same cell.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Sung-Jae Chang, Maryline Bawedin, Wade Xiong, Jong-Hyun Lee, Jung-Hee Lee, Sorin Cristoloveanu,