| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944150 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- TiN/HfSiON/SiO2/Substrate stacks were investigated with C-V measurements and SIMS.
- No linear relationship of the threshold voltage on the La concentration at the HfSiON/SiO2 was found.
- A linear relationship of the threshold voltage on the La sheet concentration in the HfSiON was found.
- Crystallization of the HfSiON is proposed as explanation of the experimental findings.
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Authors
M. Hackenberg, P. Pichler, S. Baudot, Z. Essa, M. Gro-Jean, C. Tavernier, S. Schamm-Chardon,