| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944157 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- We examine degradation of Ta2O5 high-k oxide.
- Effect of recrystallization on the electrical properties of Ta2O5 is investigated.
- Poly-crystalline Ta2O5 shows different conductive domains.
- Conductive atomic force microscopy (C-AFM) and TEM are used for characterization.
Related Topics
Physical Sciences and Engineering
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Hardware and Architecture
Authors
Umberto Celano, Ravi Chandra Chintala, Christoph Adelmann, Olivier Richard, Wilfried Vandervorst,