Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6944160 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Over-one-year-long test results for low-k dielectric TDDB are reported.
- A methodology has been set up to compare different models that predict lifetime.
- The lucky-electron model shows a higher ability to predict dielectric lifetime.
- The fitting parameters are determined independently from the MTTF fit.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
E. Chery, X. Federspiel, D. Roy, F. Volpi, J.-M. Chaix,