| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944170 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- PBTI improvement in HfO2 nFETs achieved by a controlled insertion of La.
- Anomalous negative ÎVTH due to charge exchange between high-k and metal gate.
- Anomalous and conventional PBTI components are decoupled and studied separately.
- Analytical model including both components for lifetime extrapolation is presented.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Toledano-Luque, B. Kaczer, M. Aoulaiche, A. Spessot, Ph.J. Roussel, R. Ritzenthaler, T. Schram, A. Thean, G. Groeseneken,