| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944189 | Microelectronic Engineering | 2012 | 5 Pages |
Abstract
⺠CMOS-based patterning of TiN electrodes can reduce the electrochemical characteristics. ⺠N2/H2-based chemistries are good alternatives to keep the TiN surface intact. ⺠The use of H2O vapor/CF4 can lead to even further improvement.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
N. Collaert, G. Mannaert, V. Paraschiv, D. Goossens, M. Demand, W. Eberle,