| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944198 | Microelectronic Engineering | 2012 | 5 Pages |
Abstract
⺠Flash memory programming speeds can be improved by using a Silicon-Germanium based substrate material. ⺠Model was developed using a Nonquasi-Static MOSFET model as a foundation. ⺠Model has demonstrated accurate results as channel lengths are reduced. ⺠Probability based modeling was not able to adequately demonstrate the effects of Germanium in the substrate material.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Scott C. Wolfson, Fat D. Ho,