Article ID Journal Published Year Pages File Type
6944267 Microelectronic Engineering 2012 6 Pages PDF
Abstract
► Ni/n-GaAs/In Schottky diodes are fabricated by magnetron DC sputtering system. ► The zero-bias barrier height and ideality factor show temperature dependence. ► Temperature dependence of the parameters was attributed to Gaussian distribution in the barrier. ► Temperature dependent flat-band barrier was explained by temperature dependence of band-gap. ► It is recommended that the values of σs0 and α should be placed on commercial catalogue.
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Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes
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