| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944273 | Microelectronic Engineering | 2012 | 7 Pages |
Abstract
⺠We propose two mechanisms of step height reduction during Cu CMP. ⺠Either electrochemical reactions or Hertzian contact dominates mechanisms. ⺠Metal-ion-concentration-cell was discovered between each pattern. ⺠Contact pressure on the single pattern is in inverse proportion to the line width. ⺠Beside pattern density, pattern width/space affects step height reduction.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Sukbae Joo, Hong Liang,