| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944274 | Microelectronic Engineering | 2012 | 5 Pages |
Abstract
⺠An APD with ultra-low dark current (0.10 nA@M = 8) has been demonstrated. ⺠The volume dark current contribution becomes dominant with multiplication gain. ⺠The punch-through configuration is helpful to reduce the dark current. ⺠Multiplication layer thickness is critical to dark current reduction.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yanli Zhao, Suxiang He,