Linking EUV lithography line edge roughness and 16Â nm NAND memory performance

► 32 nm Half-pitch lines/spaces pattern were exposed in extreme UV lithography. ► Low/high frequency roughness was characterized for four different smoothing processes. ► Roughness was used to simulate 16 nm half-pitch NAND memory cell electrical failure. ► Bit error rate is exponentially dependent on low frequency roughness. ► High frequency roughness impact is only marginal.