Article ID Journal Published Year Pages File Type
6944314 Microelectronic Engineering 2012 6 Pages PDF
Abstract
► A memory device with gold nanoparticles in polymethylsilsesquioxane demonstrated. ► Effects of metal electrode types on the memory explained. ► Effects of polymethylsilsesquioxane thickness on the memory explained. ► The transport mechanisms proposed and explained.
Keywords
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Effects of metal electrodes and dielectric thickness on non-volatile memory with embedded gold nanoparticles in polymethylsilsesquioxane
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