Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6944322 | Microelectronic Engineering | 2012 | 5 Pages |
Abstract
⺠An ultrathin α-Ta/graded Ta(N)/TaN multilayer film was prepared. ⺠The reliability of Ta/TaN film is sensitive to variation of Ta phase structure. ⺠An amorphous interlayer can improve the properties of the diffusion barrier. ⺠The α-Ta/graded Ta(N)/TaN multilayer could block Cu diffusion at 700 °C.
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Authors
C.H. Liu, W. Liu, Y.H. Wang, Y. Wang, Z. An, Z.X. Song, K.W. Xu,