Article ID Journal Published Year Pages File Type
6944322 Microelectronic Engineering 2012 5 Pages PDF
Abstract
► An ultrathin α-Ta/graded Ta(N)/TaN multilayer film was prepared. ► The reliability of Ta/TaN film is sensitive to variation of Ta phase structure. ► An amorphous interlayer can improve the properties of the diffusion barrier. ► The α-Ta/graded Ta(N)/TaN multilayer could block Cu diffusion at 700 °C.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, , , , , , ,