| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944332 | Microelectronic Engineering | 2012 | 8 Pages |
Abstract
⺠We report a powerful new route to fabricate air gap dielectrics with well-defined pore geometries. ⺠Method utilizes the combination of nanoimprint lithography and a sacrificial template approach. ⺠Successful fabrication of defect free mechanically robust air gap films (ultra-low k value of 1.9). ⺠Attractive candidates as interlayer dielectrics for next-generation integrated circuit applications.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Burcin Erenturk, Myoung-Hwan Park, Vincent M. Rotello, Kenneth R. Carter,