| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944356 | Microelectronic Engineering | 2012 | 5 Pages |
Abstract
⺠We present a new thermal NIL resist for high-aspect-ratio patterns via a bilayer approach. ⺠The resist properties are tailored by free radical polymerization of specific comonomers. ⺠The resist shows excellent flowability and demoulding characteristics. ⺠A high oxygen RIE resistance demonstrates the suitability of the resist as a masking layer.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Messerschmidt, A. Schleunitz, C. Spreu, T. Werner, M. Vogler, F. Reuther, A. Bertz, H. Schift, G. Grützner,