| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944412 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠We present an AFM method to evaluate EUV photo resist strength. ⺠Square dependence of the breakage force as a function of line width is shown. ⺠The derived yield stress is related to the pattern collapse probability.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Gustaf Winroth, Roel Gronheid, Tae-Gon Kim, Paul W. Mertens,