| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944451 | Microelectronic Engineering | 2012 | 5 Pages |
Abstract
⺠Self-aligned multiple patterning (SAMP) techniques for scaling to 5 nm are studied. ⺠It is shown that extra masks are required to solve the overlay challenges. ⺠SATP is most cost-effective as it allows fewer masks with 2-D design flexibility. ⺠SASP process will most likely reach the maximum cycles of frequency multiplication. ⺠It is unlikely to adopt SAOP or EUV + SADP process in VLSI manufacturing.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yijian Chen, Qi Cheng, Weiling Kang,