| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944473 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠Quantitative comparison of Monte-Carlo simulation codes. ⺠Investigating the influence of secondary electron usage on the Point-Spread-Function. ⺠Monitoring influence on 100 keV high resolution electron beam lithography. ⺠SE consideration leads to dose uniformity advantage and increased process window. ⺠Observing high impact on pattern containing structures and gaps smaller than 100 nm.
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Authors
Marcus Rommel, Karl E. Hoffmann, Thomas Reindl, Jürgen Weis, Nezih Unal, Ulrich Hofmann,