| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944474 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠Promising way of patterning epitaxial graphene using a FIB technique and Ga+ ions demonstrated. ⺠Allows the formation of periodic local nano-defects in graphene grown on a SiC substrate.
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Authors
B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Mayumi Sato, A. Ouerghi, D. Lucot, E. Bourhis, J. Gierak,