| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944491 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠A parametric study for ICP etching of InAs and InSb in BCl3/Cl2/Ar plasma is reported. ⺠They have similar results with respect to the change of gas composition, pressure, ICP and RF power. ⺠An optimized room temperature etching process has been developed. ⺠Moderate anisotropic etching rate with ultra-smooth surfaces is achieved.
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Authors
Jian Sun, Jürgen Kosel,