| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944602 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠The electrical properties of Cr-SrTiO3 films deposited on p-Si(1 0 0) substrates are investigated. ⺠Optimized Cr-SrTiO3 films used in a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). ⺠ReCTF device exhibited ultra-fast switching performance and improved retention characteristics.
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Authors
Yujeong Seo, Minyeong Song, Ho-Myoung An, Hee-Dong Kim, Tae Geun Kim, Yun-Mo Sung, Yeon Soo Kim,