| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944618 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠We report a simulation study of the non-local tunneling model applied to Tunnel FET. ⺠An algorithm to calibrate the non-local tunneling model with experiments is shown. ⺠Reduced mass is used as the only fitting parameter. ⺠Transverse optical phonon is used in the calculation for consistency with simulator. ⺠The tunneling generation rates for different crystal directions are calculated.
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Authors
Arnab Biswas, Surya Shankar Dan, Cyrille Le Royer, Wladyslaw Grabinski, Adrian M. Ionescu,