| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944634 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠Dual-gate ZnO nanowire field effect transistor with electron beam lithography standard process. ⺠HfO2 and Al2O3 dielectrics as top-gate and bottom-gate insulator layer, respectively. ⺠The top-gate mode electrical characteristics behavior is superior to bottom-gate mode. ⺠HfO2 has no improvement performance compared with Al2O3 film with larger dielectric constant.
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Authors
Zongni Yao, Weijie Sun, Wuxia Li, Haifang Yang, Junjie Li, Changzhi Gu,