Article ID Journal Published Year Pages File Type
6944642 Microelectronic Engineering 2012 4 Pages PDF
Abstract
► The resistive switching of the Ti/Si3N4/Ti cell have been investigated. ► The set/reset operation was achieved at a low current for both states. ► The memory cells showed improved endurance characteristics over ∼2700 cycles.
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Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
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