| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944650 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠ReRAM is one of storage device with reversible switching phenomena. ⺠The devices show poor reproducibility of switching voltages. ⺠We found it that the reproducibility is improvement by suppression of the oxide area. ⺠For practical application of ReRAM, we suggest the technique.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Shintaro Otsuka, Saeko Furuya, Ryota Takeda, Tomohiro Shimizu, Shoso Shingubara, Tadataka Watanabe, Yoshiki Takano, Kouichi Takase,