Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process

► Fabricated smallest high density Si double quantum dot transistors using HSQ resist. ► E-Beam lithography gave reproducible device dimensions down to 25 nm. ► Eighty percent of the fabricated devices had dimensional variations of less than 5 nm. ► Our fabrication process can realise up to 144 scalable devices in parallel. ► This approach is compatible with very large scale integration.