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Schottky Barrier Height reduction using strained silicon-on-insulator and dopant segregation

Article ID Journal Published Year Pages File Type
6944676 Microelectronic Engineering 2012 4 Pages PDF
Abstract
► We have developed a test structure for very low Schottky Barrier Height extraction. ► We study the effect of dopant segregation associated to strained silicon on PtSi. ► We show the cumulative effects of two Schottky Barrier Height lowering methods.
Keywords
Schottky barrier
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Schottky Barrier Height reduction using strained silicon-on-insulator and dopant segregation
Authors
Florent Ravaux, Emmanuel Dubois, Zhenkun Chen,
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Journal
Microelectronic Engineering
Journal: Microelectronic Engineering
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