Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6944676 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠We have developed a test structure for very low Schottky Barrier Height extraction. ⺠We study the effect of dopant segregation associated to strained silicon on PtSi. ⺠We show the cumulative effects of two Schottky Barrier Height lowering methods.
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Physical Sciences and Engineering
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Hardware and Architecture
Authors
Florent Ravaux, Emmanuel Dubois, Zhenkun Chen,