| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944753 | Microelectronic Engineering | 2012 | 6 Pages |
Abstract
⺠Mechanisms of hot electron degradation in HEMTs. ⺠Defects responsible for recoverable degradation in HEMTs. ⺠Defects responsible for non-recoverable degradation in HEMTs.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Sokrates T. Pantelides, Yevgeniy Puzyrev, Xiao Shen, Tania Roy, Sandeepan DasGupta, Blair R. Tuttle, Daniel M. Fleetwood, Ronald D. Schrimpf,