| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944761 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
A novel monolithically-integrated LED and HEMT sensor, based on III-nitrides, is designed and realized. The main aspects of the design and processing issues of such a device are presented and discussed. Satisfactory operation of both LED and HEMT parts of the device was ascertained by means of electrical characterization. The best obtained turn-on voltage for the LED part of the device was as low as â¼4.5Â V, which is quite acceptable for nitrides, while the IDSsat value of â¼26Â mA/mm for the HEMT part, is rather low as compared to typical AlGaN/GaN HEMTs. Moreover, intense light emission was readily obtained from the LED, with a large portion of light illuminating the sensor active area. The overall satisfying performance of the integrated device opens the way for actual sensing experiments to be performed.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
F.G. Kalaitzakis, E. Iliopoulos, G. Konstantinidis, N.T. Pelekanos,