| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944781 | Microelectronic Engineering | 2012 | 4 Pages |
Abstract
⺠InGaN/GaN quantum dot superlattices grown on (11-22) GaN were studied by HRTEM. ⺠Nominal (11-22) InGaN dots were lenticular-shaped. ⺠QD size and faceting increased when nucleation occurred on inclined planes. ⺠Strain and interaction with threading dislocations introduced indium fluctuations. ⺠Lattice strain analysis was correlated to the indium content.
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Authors
A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A. Das, E. Monroy, Ph. Komninou,