| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944787 | Microelectronic Engineering | 2012 | 7 Pages |
Abstract
Scanning electron micrographs of (a and b) plane view of porous anodic alumina films grown on silicon: (a) without xerogel, (b) 7 xerogel layers of 30%Tb2O3 + 70%Al2O3 after annealing at 1000 °C for 30 min, (c) room-temperature luminescence under X-rays (radioluminescence) of this structure obtained with Cu Kα radiation energy 8.86 ke V, Ia = 15 mA with typical luminescence bands related to trivalent terbium.
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Authors
N.V. Gaponenko, V.S. Kortov, N.P. Smirnova, T.I. Orekhovskaya, I.A. Nikolaenko, V.A. Pustovarov, S.V. Zvonarev, A.I. Slesarev, O.P. Linnik, M.A. Zhukovskii, V.E. Borisenko,