| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670307 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
The work here presented deals with some physical-chemical characteristics of the HDPCVD deposited thin un-doped silicate glass (USG) films used in IC architecture. In a particular way, the dependence of the Si-OH bond concentration, revealed by FTIR, wet etch rate ratio compared with thermal SiO2 and hydrogen content, determined by elastic recoil detection analysis (ERDA), are correlated with deposition temperature. The results demonstrate how it is possible after film deposition to reveal from the HDPCVD USG film itself which real temperature it has been deposited at, allowing a practical method in production environment for statistical process control.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
G. Gulleri, C. Carpanese, C. Cascarano, D. Lodi, R. Ninni, G. Ottaviani,