| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670308 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
The thermal stability of the grown Ru and RuO2 films was investigated by rapid thermal annealing in O2 and N2 atmosphere. Ru films were found to be stable in N2 up to 900 °C and up to 500 °C in O2. RuO2-layers have been shown to be stable in O2 up to at least 600 °C.
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Authors
C. Manke, S. Miedl, O. Boissiere, P.K. Baumann, J. Lindner, M. Schumacher, A. Brodyanski, M. Scheib,