| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670325 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
Finally, first patterning attempts showed good potential for producing Cu damascene structures. Patterning using a PECVD SiO2 hard mask with partial hard mask opening was developed using ICP etch with CHF3, CF4 and He. The achieved structures showed straight profiles and no significant defects.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
K. Schulze, U. Schuldt, O. Kahle, S.E. Schulz, M. Uhlig, C. Uhlig, C. Dreyer, M. Bauer, T. Gessner,