Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9670328 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
We present the impact of the sidewall diffusion barrier on the dielectric properties of advanced Cu/porous ULK interconnects. From the temperature dependence of the leakage currents, the conduction mechanisms can be compared. The high field transport is consistent with a Poole-Frenkel model, and the low field with a variable range hopping model, from which a defect density near Fermi level is obtained. The complex surface of the etched porous ULK is better suited to a conformal and continuous barrier, such as CVD TiN, which highlight the challenge to get very thin but defect-free metal barrier for future generations.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Cyril Guedj, Jean-Frédéric Guillaumond, Lucile Arnaud, Vincent Arnal, Mohamed Aimadeddine, Gilles Reimbold, Joaquin Torres,