| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670333 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
The target of our investigation is the evaluation of the effect of decreasing thickness on the relative permittivity of dielectric films for high advanced interconnects of IC's. Two kinds of SiCOH-films with similar chemical composition and thickness between 70 and 830Â nm were deposited by spin coating (“SOD”) or PECVD (“CVD”) on silicon wafers. The relative permittivity was determined by CV-measurement and its components of polarization response are deduced from ellipsometric and FTIR measurements.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Frühauf, C. Himcinschi, M. Rennau, K. Schulze, S.E. Schulz, M. Friedrich, T. Gessner, D.R.T. Zahn, Q.T. Le, R. Caluwaerts,