| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670344 | Microelectronic Engineering | 2005 | 5 Pages |
Abstract
Thin films of different atomic ratios of nickel and aluminium were deposited on Si(0 0 1)-wafers by magnetron cosputtering. The content of deposited nickel complies to layer thickness of about 20 nm. After deposition the samples were annealed between 500 and 900 °C in steps of 100 degree using rapid thermal annealing (RTA) in N2 ambient. RBS, SEM, TEM, XRD, AES and sheet resistance measurements were performed to characterize the grown thin films.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
F. Allenstein, L. Budzinski, D. Hirsch, A. Mogilatenko, G. Beddies, R. Grötzschel, H.-J. Hinneberg,