| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670345 | Microelectronic Engineering | 2005 | 6 Pages |
Abstract
We have investigated effects of C+ ion implantation into Si substrates on electrical properties of NiSi/Si(0Â 0Â 1) contacts. Increase in sheet resistance of a NiSi layers on Si was effectively suppressed by the C implantation, which is due to preventing the agglomeration of polycrystalline NiSi grains. The contact resistance of NiSi/p+-Si contacts with C implantation is formed to be lower than that without C, while that of NiSi/n+-Si contacts is not influenced by C. The pile-up of B atoms at the NiSi/Si interface after silicidation of Ni/Si systems with C implantation accounts for this phenomenon.
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Authors
Osamu Nakatsuka, Kazuya Okubo, Akira Sakai, Masaki Ogawa, Yukio Yasuda, Shigeaki Zaima,