| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9670346 | Microelectronic Engineering | 2005 | 7 Pages |
Abstract
The stability of Ni silicide films formed with a thin interlayer of Pt onto poly-Si layer has been investigated in a wide range of silicidation temperatures between 350 and 900 °C and post-silicidation heat treatments between 500 and 1000 °C, using different characterization techniques to analyze the surface, cross-section interfaces and electrical characteristics. Formation of uniform and stable Ni(Pt)Si/poly-Si layered structures with low sheet resistances of about 5 Ω/sq. were observed up to 700 °C annealing temperature, except those obtained at 350 °C that presented a sheet resistance of 22 Ω/sq. At high temperatures, as-silicided and heat treated samples exhibited a drastic increase of the sheet resistance at 800/850 °C, respectively, due to the layer inversion and degradation of the morphology.
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Authors
I. Doi, R.C. Teixeira, R.E. Santos, J.A. Diniz, J.W. Swart, S.G. Santos Filho,